au.\*:("QUARESIMA, C")
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ELECTRONIC PROPERTIES OF THE GE-AU INTERFACE COMPOUND STUDIED WITH LOW-ENERGY-ELECTRON-LOSS-SPECTROSCOPYQUARESIMA C; SETTE F; PATELLA F et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 8; PP. 1165-1168; BIBL. 8 REF.Article
ENERGY LOSS SPECTROSCOPY (ELS) ON THE SI-AU SYSTEMPERFETTI P; NANNARONE S; PATELLA F et al.1980; SOLID STATE COMMUNIC.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 2; PP. 151-153; BIBL. 10 REF.Article
MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATIONNANNARONE S; PATELLA F; PERFETTI P et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 6; PP. 409-412; BIBL. 14 REF.Article
ELECTRONIC STATES OF CDIN2S4 AND OF OTHER II-III2-VI4 COMPOUNDS: HOW SENSITIVE ARE THEY TO THE CRYSTAL STRUCTURE.CERRINA F; QUARESIMA C; ABBATI A et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 4; PP. 429-431; BIBL. 12 REF.Article
New electronic surface states on In-terminated InAs(0 0 1)4 × 2-c(8 × 2) clean surfaceDE PADOVA, P; PERFETTI, P; QUARESIMA, C et al.Surface science. 2003, Vol 532-35, pp 837-842, issn 0039-6028, 6 p.Conference Paper
Surface core level shift photoelectron diffraction of Rh(100)PRINCE, K. C; RESSEL, B; QUARESIMA, C et al.Surface science. 1997, Vol 377-79, pp 117-120, issn 0039-6028Conference Paper
Photoemission from atomic and molecular adsorbates on Rh(100)ZACCHIGNA, M; ASTALDI, C; MATTEUCCI, M et al.Surface science. 1996, Vol 347, Num 1-2, pp 53-62, issn 0039-6028Article
Thiophene on Si(111) 2×1: synchrotron radiation study of a desulfurization processPIANCASTELLI, M. N; ZANONI, R; KELLY, M. K et al.Solid state communications. 1987, Vol 63, Num 2, pp 85-89, issn 0038-1098Article
Electronic properties of the precrystallization regime of germanium: a photoemission studyPERFETTI, P; QUARESIMA, C; CAPASSO, C et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 6998-7005, issn 0163-1829Article
Core excitons in amorphous semiconductorsEVANGELISTI, F; PATELLA, F; RIEDEL, R. A et al.Physical review letters. 1984, Vol 53, Num 26, pp 2504-2507, issn 0031-9007Article
Ferromagnetic Mn-doped Si0.3Ge0.7 nanodots self-assembled on Si(100)DE PADOVA, P; OLIVIERI, B; OTTAVIANI, C et al.Journal of physics. Condensed matter (Print). 2012, Vol 24, Num 14, issn 0953-8984, 142203.1-142203.5Article
High resolution photoemission study of the surfactant desorption after Sb mediated Ge epitaxy on Si(001)DE PADOVA, P; LARCIPRETE, R; QUARESIMA, C et al.Applied surface science. 1998, Vol 123-24, pp 641-645, issn 0169-4332Conference Paper
Temperature dependence of the heterojunction band offset : Si on InP(110)DELL'ORTO, T; DE STASIO, G; CAPOZI, M et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 11, pp 8035-8039, issn 0163-1829Article
Dipole-induced changes of the band discontinuities at the SiO2-Si interfacePERFETTI, P; QUARESIMA, C; COLUZZA, C et al.Physical review letters. 1986, Vol 57, Num 16, pp 2065-2068, issn 0031-9007Article
Au-Si interface formation: the other side of the problem = Formation de l'interface Au-Si: l'autre côté du problèmeFRANCIOSI, A; NILES, D. W; MARGARITONDO, G et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 10, pp 6917-6919, issn 0163-1829Article
Electronic structure of carbidic and graphitic carbon on Ni(111)ROSEI, R; MODESTI, S; SETTE, F et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3416-3422, issn 0163-1829Article
Photoemission spectroscopy investigation of the electronic structure of carbidic and graphitic carbon on Ni(111) = Etude par spectroscopie de photoémission de la structure électronique du carbone carbidique et graphitique sur Ni(111)ROSEI, R; MODESTI, S; SETTE, F et al.Solid state communications. 1983, Vol 46, Num 12, pp 871-874, issn 0038-1098Article
Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 x 2-c(8 x 2)DE PADOVA, P; QUARESIMA, C; HRICOVINI, K et al.Journal de physique. IV. 2006, Vol 132, pp 1-5, issn 1155-4339, 5 p.Conference Paper
Atomic structure and magnetic properties of Mn on InAs(1 0 0)HRICOVINI, K; DE PADOVA, P; LE FEVRE, P et al.Applied surface science. 2003, Vol 212-13, pp 17-25, issn 0169-4332, 9 p.Conference Paper
Benzene chemisorption on amorphous siliconTACHE, N; CHANG, Y; KELLY, M. K et al.Applied physics letters. 1987, Vol 50, Num 9, pp 531-532, issn 0003-6951Article
Density of states modifications in amorphous and hydrogenated amorphous germanium and their effect on 3d core levels binding energyPATELLA, F; SETTE, F; PERFETTI, P et al.Solid state communications. 1984, Vol 49, Num 8, pp 749-752, issn 0038-1098Article
Detection of hydrogen induced schottky barrier modulation in Pd/SiOx/a-Si:H diodes by photoemission with synchroton radiationFORTUNATO, G; DAMICO, A; COLUZZA, C et al.Applied physics letters. 1984, Vol 44, Num 9, pp 887-889, issn 0003-6951Article
Structure of graphitic carbon on Ni(111): a surface extended-energy-loss fine-structure studyROSEI, R; DE CRESCENZI, M; SETTE, F et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 2, pp 1161-1164, issn 0163-1829Article
Resonant photoemission from surface states in GaPSETTE, F; PERFETTI, P; PATELLA, F et al.Physical review. B, Condensed matter. 1983, Vol 28, Num 8, pp 4882-4885, issn 0163-1829Article
Structural and magnetic properties of Ge1-xMn/Ge(001) 2 x 1 diluted magnetic semiconductorsDE PADOVA, P; QUARESIMA, C; LUCARI, F et al.Journal de physique. IV. 2006, Vol 132, pp 231-235, issn 1155-4339, 5 p.Conference Paper
